| 摘要 |
PURPOSE: A method for manufacturing a capacitor of a semiconductor device is provided to be capable of preventing the damage of a hard mask generated when carrying out an etching process for forming a storage node by forming the hard mask by using Al2O3 material. CONSTITUTION: After sequentially forming an etch stop layer(120), an interlayer dielectric(130), a hard mask(140), and the first photoresist pattern on a semiconductor substrate(100) having a plug poly(110), the hard mask is selectively etched by using the first photoresist pattern as a mask. After carrying out a heat treatment at the hard mask, a storage node contact hole is formed by selectively etching the interlayer dielectric and etch stop layer using the hard mask as an etching mask for exposing the plug poly. After sequentially depositing a poly layer(170) and the second photoresist layer on the resultant structure for filling the storage node contact hole, the second photoresist layer is etched until the poly layer is exposed. Then the poly layer is etched until the hard mask is exposed. Preferably, the hard mask is deposited by using Al2O3 material.
|
