| 摘要 |
PURPOSE: A method for forming an isolation layer of a semiconductor device is provided to be capable of preventing the generation of moat by roundly forming the upper edge portion of a trench using polymer generated while excessively etching a nitride layer. CONSTITUTION: After sequentially forming a pad oxide layer(12) and a nitride layer(13) on a semiconductor substrate(11), polymer is formed at both sidewalls of the nitride layer by excessively etching the nitride layer. A trench is then formed in the semiconductor substrate, wherein the trench has a round upper edge portion. After removing the polymer, a thermal oxide layer(18) is formed on the inner surface of the trench. After forming an HDP(High Density Plasma) oxide layer(19) on the entire surface of the resultant structure, a planarization process is carried out for exposing the nitride layer.
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