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发明名称
VERTICAL TRANSISTOR TRENCH CAPACITOR DRAM CELL AND METHOD OF MAKING THE SAME
摘要
申请公布号
EP1320885(A2)
申请公布日期
2003.06.25
申请号
EP20010964532
申请日期
2001.08.31
申请人
INFINEON TECHNOLOGIES NORTH AMERICA CORP.;INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人
DYER, THOMAS, W.;KNORR, ANDREAS;ECONOMIKOS, LAERTIS;HALLE, SCOTT
分类号
H01L21/8242;(IPC1-7):H01L21/824;H01L27/108
主分类号
H01L21/8242
代理机构
代理人
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