| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of removing impurities remaining in a copper seed layer, a copper thin film, or a high dielectric constant oxide layer and improving the adhesive force of the copper seed layer, the copper thin film, or the high dielectric constant oxide layer by carrying out a remote plasma process. CONSTITUTION: After forming a damascene pattern at the upper portion of a semiconductor substrate(11) by carrying out a damascene process, a seed layer(18) is formed on the resultant structure. Then, a remote plasma process is carried out on the seed layer by using hydrogen gas of 10-1000 sccm at the pressure of 0.01-300 Torr. Preferably, the remote plasma process is carried out by supplying RF(Radio Frequency) power of 10-300 Watt at room temperature or at the temperature of 300 °C for 10 seconds to 20 minutes.
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