ELECTROSTATIC DISCHARGE PROTECTION TRANSISTOR

摘要

PURPOSE: An electrostatic discharge protection transistor is provided to improve an electrical characteristic by forming a uniform current path when charges are generated by an outside high voltage so that a contact melting phenomenon caused by a charge crowding phenomenon is prevented. CONSTITUTION: A drain junction part(22) of a circular type is formed to be connected to a pad part(26). A drain junction part contact(24) of a circular type is formed in the drain junction part. An isolation layer(21) of a circular ring type is formed along the periphery of the drain junction part. A source junction part(23) of a circular ring type is formed along the periphery of the isolation layer, connected to a supply voltage/ground voltage(27). A source junction part contact(25) of a circular line type is formed in the source junction part.