| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of preventing the phosphorus of a plug polysilicon layer from diffusing into a drain region by forming the plug polysilicon layer using a lower and upper plug polysilicon layer. CONSTITUTION: A gate line(225) made of a gate electrode(210) and a mask nitride layer(220), is formed on a silicon substrate(200). A source/drain region(230) is formed in the silicon substrate by implanting ions into the silicon substrate using the gate line as a mask. After forming a spacer(240) at both sidewalls of the gate line, an interlayer dielectric(250) and a photoresist pattern are sequentially formed on the resultant structure. A plug contact hole is formed by selectively etching the interlayer dielectric using the photoresist pattern as a mask for exposing the drain region of the silicon substrate. After cleaning the plug contact hole, a plug(290) made of a lower and upper plug polysilicon layer(270,280), is formed in the plug contact hole by a single process. At this time, the lower and upper plug polysilicon layer have different concentrations of phosphorus, respectively.
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