| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to effectively restrain the degradation of devices and to reduce contact resistance by diffusing impurities from the second contact plug to the first contact plug. CONSTITUTION: An interlayer dielectric(40) is formed on a semiconductor substrate(10). A contact hole(50) is formed to expose a desired portion of the substrate(10). The first contact plug(60) containing lightly doped impurities is formed on the interlayer dielectric(40) including the contact hole. The second contact plug(70) containing heavily doped impurities is then formed on the first contact plug(60).
|
