FORMING METHOD OF PHOTORESIST PATTERN IMPROVING ETCHING RESISTANCE BY RELACS MATERIAL

摘要

PURPOSE: A forming method of photoresist pattern improving etching resistance by RELACS(Resist Enhancement Lithography Assisted by Chemical Shrink) material is provided to be capable of improving the etching characteristics of the photoresist pattern. CONSTITUTION: A photoresist layer is formed on the upper portion of an etching object layer. The first photoresist pattern is formed by selectively exposing and developing the photoresist layer. After coating RELACS material on the photoresist pattern, the resultant structure is annealed. The second photoresist pattern is formed by developing the resultant structure. Preferably, the annealing process is carried out at the temperature of 90-150 °C.