METHOD FOR FORMING RU STORAGE NODE IN SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a Ru storage node in a semiconductor device is provided to be capable of minimizing losses of the Ru storage node and simplifying manufacturing processes. CONSTITUTION: After forming an insulating layer(23) on a substrate(20) having a plug(22), an opening part is formed to expose the plug(22) by selectively etching the insulating layer(23). A Ru film and a barrier layer are sequentially deposited on the resultant structure. A photoresist layer is coated on the barrier layer to fill into the opening part. A Ru storage node(24) isolated each other is then formed by etch-back of the photoresist layer to expose the insulating layer(23). By cleaning the resultant structure, the remaining photoresist and residues are removed.