| 摘要 |
PURPOSE: A method for manufacturing an image sensor is provided to be capable of improving photo sensitivity. CONSTITUTION: Stacked gate electrodes are formed on a semiconductor substrate(20) having a photodiode(PD), and a sensing diffusion region(26) is formed in the substrate(20) formed between the stacked gate electrodes. An insulating layer(27) is formed on the entire surface of the resultant structure. A plug(28) is formed to contact simultaneously the gate electrode and the sensing diffusion region(26) through the insulating layer(27). A spacer(25) is formed at both sidewalls of the gate electrode, thereby preventing the gate electrode from connecting the plug(28).
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