| 摘要 |
PURPOSE: A method for manufacturing an image sensor is provided to be capable of improving photo sensitivity by enhancing the generation of EHP(Electron-Hole Pair). CONSTITUTION: A trench for a photodiode(PD) is formed by selectively etching a semiconductor layer(20). The first impurity region(21) is formed by filling doped germanium(Ge) into the trench and planarizing. A field insulating layer(22) is formed to contact one end of the first impurity region(21). A gate electrode(24) is formed to contact the other end of the first impurity region(21). The second impurity region(n) is formed at the semiconductor layer overlapped with the gate electrode. The third impurity region(p0) is formed on the surface of the first impurity region(21).
|
