| 摘要 |
PURPOSE: A method for forming a bit line using ArF exposing source is provided to be capable of minimizing the deformation of patterns and easily obtaining fine patterns. CONSTITUTION: An anti-reflective layer is formed on a substrate(10) including the first and second metal and an insulating layer. A photoresist pattern is formed on the anti-reflective layer by using ArF exposing source. A hard mask(13) is formed by sequentially etching the anti-reflective layer and the insulating layer while maintaining the temperature from -100°C to 20°C. A bit line(12) is formed by selectively etching the second metal by using the hard mask(13) as a mask maintaining the temperature from 20°C to 60°C. A barrier layer(11) is then formed by selectively etching the first metal by using the hard mask(13) as a mask maintaining the temperature from -100°C to 20°C.
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