| 摘要 |
PURPOSE: A method for fabricating an isolation layer of a semiconductor device is provided to prevent boron ions in a p-well from being diffused into a trench by forming a barrier nitride layer on the sidewall of the trench of a shallow trench isolation(STI) structure, and to eliminate a device defect by preventing a moat from being generated by the barrier nitride layer. CONSTITUTION: After a pad oxide layer and a nitride layer are formed on a semiconductor substrate(11), a trench region is defined. The nitride layer, the pad oxide layer and the semiconductor substrate in the trench region are partially eliminated to form the trench in the semiconductor substrate. A thermal oxide layer(16) is formed on the sidewall of the trench. The barrier nitride layer(17) is formed on the resultant structure. A high density plasma(HDP) oxide layer(18) is formed on the resultant structure, a planarization process is performed to expose the nitride layer. The exposed nitride layer and the barrier nitride layer are partially removed so that a recess is formed between the pad oxide layer and the HDP oxide layer. The pad oxide layer is eliminated.
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