| 摘要 |
PURPOSE: A trench isolation method is provided to prevent a dent phenomenon chronically occurring in a conventional trench-type isolation process by performing a relatively simple additional process for recessing a pad layer. CONSTITUTION: The pad layer is formed on a substrate(100). An etch stop layer is formed on the pad layer. The etch stop layer, the pad layer and the substrate in a trench region are sequentially eliminated through a patterning process to form an etch stop layer pattern, a pad layer pattern and a substrate trench(140). An isotropic etch process is performed on the pad layer pattern to laterally recess the pad layer pattern. A silicon nitride layer liner(160) is formed on the substrate including the inner wall of the trench. A silicon oxide layer is stacked on the substrate to fill the trench. A chemical mechanical polishing(CMP) process is performed on the front surface of the substrate until the etch stop layer pattern is exposed. The etch stop layer pattern is removed to expose an active region through an etch process.
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