| 摘要 |
PURPOSE: A method for forming a fine line pattern in a semiconductor device is provided to be capable of easily obtaining line patterns of sub-micrometer while using KrF optical source. CONSTITUTION: A resist pattern(2) having a line spacer pattern of the first width is formed on a semiconductor substrate(1). An insulating spacer(3) is formed at both sidewalls of the line spacer pattern so as to define a line spacer pattern of the second width. At this time, the second width is narrower than the first width. A conductive layer is deposited on the resultant structure to entirely fill the second width of a line spacer pattern. A conductive wiring(4) of the second width is formed by selectively etching the conductive layer. Then, a hard mask(5) is formed on the conductive wiring(4).
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