| 摘要 |
PURPOSE: A method for manufacturing a capacitor in a semiconductor device is provided to be capable of improving the capacitance by using a PE(Plasma Enhanced)-oxide layer having low step coverage. CONSTITUTION: After forming the first interlayer dielectric(215) having a plug(210) on a substrate(200), a barrier layer(225) and a PE-oxide layer(230) are sequentially formed on the resultant structure. After cleaning the resultant structure, the first doped poly and the second interlayer dielectric(245) are sequentially formed. By dry etching of the second interlayer dielectric and the first doped poly, a lower electrode(255) is formed. A sidewall electrode(260) made of the second doped poly is formed at both sidewalls of the lower electrode and the second interlayer dielectric. The second interlayer dielectric(245) and the PE-oxide layer(230) are removed. After growing an MPS(Metastable Poly-Silicon) layer on the lower electrode and the sidewall electrode, an upper electrode is then formed.
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