| 摘要 |
PURPOSE: A method for fabricating a copper interconnection of a semiconductor device is provided to prevent copper from being diffused into an insulation layer and improve reliability of interconnections by re-depositing a copper diffusion preventing layer deposited in a contact region formation process on the sidewall of a contact region. CONSTITUTION: The contact region is formed in the insulation layer between a lower copper interconnection and an upper copper interconnection. A sputtering process is performed on the contact region to etch the copper diffusion preventing layer under the contact region until the lower copper interconnection is exposed. The etched copper diffusion preventing layer is re-deposited on the sidewall of the contact region.
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