| 摘要 |
PURPOSE: Provided is a photoresist cleaning solution composition used for cleaning semiconductor substrates as a last process after developing when forming photoresist patterns, which can improve the disintegration of the patterns. CONSTITUTION: The photoresist cleaning solution composition comprises a surfactant, an alcohol compound, and water in the ratio of 0.001-5wt%:0.01-10wt%:85-99.989wt%, wherein the surfactant comprises an alcohol amine represented by the formula 1 and a salt of a carboxylic acid compound. The alcohol amine is selected from the group consisting of monoethanol amine, diethanol amine, and triethanol amine. And the carboxylic acid compound is selected from C2-C500 compounds. In the formula, R1 and R2 are hydrogen, C1-C10 alkyl, and C1-C10 alkyl alcohol and n is an integer of 1-10. |
