发明名称 |
Method of depositing a barrier insulating layer with low dielectric constant on a copper film |
摘要 |
Disclosed is a method of manufacturing a semiconductor device in which a barrier insulating film covering a copper wiring is formed by a plasma enhanced CVD method. The method comprises the steps of connecting a supply power source for supplying high frequency power of a frequency of 1 MHz or more to a first electrode 2, and holding a substrate 21 on a second electrode 3 facing the first electrode 2, the substrate 21 on which a copper wiring is formed; supplying a film forming gas containing an alkyl compound and an oxygen-containing gas between the first and second electrodes 2, 3, and regulating a gas pressure of the film forming gas to 1 Torr or less; and supplying the high frequency power to any one of the first and second electrodes 2, 3 to convert the film forming gas into a plasma state, and allowing the alkyl compound and the oxygen-containing gas of the film forming gas to react with each other and thus form a barrier insulating film covering the surface of the substrate 21. <IMAGE>
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申请公布号 |
EP1321976(A2) |
申请公布日期 |
2003.06.25 |
申请号 |
EP20020024920 |
申请日期 |
2002.11.06 |
申请人 |
CANON SALES CO., INC.;SEMICONDUCTOR PROCESS LABORATORY CO., LTD. |
发明人 |
SHIOYA, YOSHIMI;NISHIMOTO, YUHKO;SUZUKI, TOMOMI;MAEDA, KAZUO |
分类号 |
C23C16/505;C23C16/30;C23C16/40;C23C16/44;C23C16/455;H01L21/205;H01L21/31;H01L21/316;H01L21/768;H01L23/522;(IPC1-7):H01L21/316 |
主分类号 |
C23C16/505 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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