发明名称 Method for reducing residual electric charge created by a previous process step on a conductive structure
摘要 Method for reducing a residual electric charge created by a previous process step, particularly a plasma treatment, on a conductive structure, particularly in a semiconductor integrated circuit, is characterised in that the conductive structure is submitted to a plasma treatment having a discharging effect. This discharging treatment can be performed as a stand alone step with selected gas composition of the plasma and/or other parameters adapted like applied power and process pressure, or may be done at the end of the former plasma treatment by altering the gas composition of the plasma and/or other parameters like applied power and process pressure. <IMAGE>
申请公布号 EP1321977(A1) 申请公布日期 2003.06.25
申请号 EP20010403276 申请日期 2001.12.17
申请人 AMI SEMICONDUCTOR BELGIUM BVBA 发明人 BRUNEEL, PIERRE STEFAAN;DE BACKER, EDDY;FATHOUTDINOV, MALIK MASGUTOVICH
分类号 H01L21/02;H01L21/311;H01L21/3213;(IPC1-7):H01L21/321 主分类号 H01L21/02
代理机构 代理人
主权项
地址