ELECTRICALLY ERASABLE AND PROGRAMMABLE READ-ONLY-MEMORY CELL TRANSISTOR AND FABRICATING METHOD THEREOF

摘要

PURPOSE: A method for fabricating an electrically erasable and programmable read-only-memory(EEPROM) cell transistor is provided to minimize a problem that a tunnel oxide layer has an ununiform area in a subsequent process by performing a wet etch process for forming a gate oxide layer pattern while the upper surface of a gate oxide layer is covered with an adhesion improving layer pattern. CONSTITUTION: The adhesion improving layer pattern(135) is formed which exposes the gate oxide layer and the upper surface of a predetermined of the gate oxide layer that are sequentially stacked on a semiconductor substrate(100). The exposed gate oxide layer is etched to form the gate oxide layer pattern(125) exposing the upper surface of the semiconductor substrate. A tunnel oxide layer thinner than the gate oxide layer is formed on the exposed semiconductor substrate.