METHOD FOR FORMING GATE ELECTRODE IN SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for a gate electrode in a semiconductor device is provided to prevent oxidation of the gate electrode and to restrain leakage current between the gate electrode and a drain by forming a buffer oxide layer using selective oxidation processing. CONSTITUTION: A gate electrode pattern(210) is formed by sequentially stacking a gate oxide layer(212), a polysilicon layer(214), a metal film(216) and a hard mask(218) on a silicon substrate(200). After depositing a silicon layer at both sidewalls of the gate electrode pattern(210), a buffer oxide layer(240) is formed by selective oxidation processing of the silicon layer. Then, a nitride spacer(250) is formed at both sidewalls of the buffer oxide layer(240).