| 摘要 |
PURPOSE: A method for forming a trench of a semiconductor device is provided to be capable of forming trenches having the same depth in a substrate regardless of the widths of the trenches by carrying out an ion implantation before etching the substrate. CONSTITUTION: After sequentially forming an oxide layer(12) and a nitride layer(13) on a semiconductor substrate(11), a photoresist pattern(14) is formed on the resultant structure. The predetermined portions of the semiconductor substrate are exposed by sequentially etching the oxide and nitride layer using an end point detecting apparatus. Damaged regions having the same depth are formed in the semiconductor substrate by carrying out an ion implantation using the photoresist pattern as a mask. At this time, the depths of the damaged regions are controlled by implantation conditions, respectively. Then, the damaged portions are selectively etched for forming trenches(15) having the same depth regardless of the widths of the trenches.
|
