| 摘要 |
PURPOSE: A method for manufacturing a flash memory having a self aligned floating gate is provided to be capable of restraining the generation of residuals of a control gate and the floating gate and securing the reproductivity of the flash memory by improving the shape of the floating gate. CONSTITUTION: A plurality of STI(Shallow Trench Isolation) layers(22) are formed at a semiconductor substrate(21), wherein the STI layer includes a nipple portion having a positive slope. After forming a tunnel oxide layer(23) on the semiconductor substrate, a self aligned floating gate pattern is formed between the nipple portions of the STI layers, wherein the self aligned floating gate pattern has a negative slope. A nipple side-wall(220) is formed by carrying out a dry etching process at the nipple portion of the STI layer. After sequentially forming dielectric layer(250) and a control gate(260) on the resultant structure, a self-aligned floating gate(240) is completed by carrying out a self-aligned etching process.
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