METHOD FOR FORMING CONTACT HOLE AND METHOD FOR MANUFACTURING MEMORY DEVICE USING THE SAME

摘要

PURPOSE: A method for forming a contact hole and a method for manufacturing a memory device using the same are provided to be capable of preventing the decrease of the bottom size of the contact hole by previously removing a nitride layer for forming the contact hole. CONSTITUTION: After sequentially forming the first oxide layer(32) and a nitride layer(33) on a semiconductor substrate(31), the first hole is formed by selectively etching the nitride layer using a photoresist pattern as a mask for exposing the predetermined surface of the first oxide layer. The second oxide layer(36) is formed on the entire surface of the resultant structure. Then, the second hole having the same width as the first hole is formed by selectively etching the second oxide layer. A contact hole is then completed by selectively etching the first oxide layer through the first and second hole for exposing the surface of the semiconductor substrate.