| 摘要 |
PURPOSE: A method for forming a metal wiring in a semiconductor device using dual-damascene processing is provided to be capable of preventing bridge between metal lines and simplifying manufacturing processes. CONSTITUTION: An interlayer dielectric(22) is formed on a semiconductor substrate(21). A positive-type photoresist layer is coated on the interlayer dielectric(22). A desired portion of the positive-type photoresist layer is exposed to define a contact region. A negative-type photoresist layer is coated on the positive-type photoresist layer. A desired portion of the negative-type photoresist layer is exposed to define a metal wiring region. By simultaneously developing the photoresist layers, a T-shaped photoresist pattern is formed. The T-shaped photoresist pattern is hardened by E-beam. A contact hole and a trench are formed by selectively etching the exposed interlayer dielectric(22) using the hardened photoresist pattern. After removing the photoresist pattern, a contact plug(27) and a metal wiring(28) are formed by filling a metal film into the contact hole and the trench and polishing the metal film.
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