| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to prevent damage of an active region and to simplify manufacturing processes without using STI(Shallow Trench Isolation) CMP(Chemical Mechanical Polishing). CONSTITUTION: A trench is formed at a semiconductor substrate(100) to define an active and field region. An O3-USG(Undoped Silicate Glass) layer(104a) is filled into the trench. A gate-trench is formed in the O3-USG layer to expose the substrate. After forming a gate oxide layer(108) at the exposed substrate, a conductive layer is formed on the resultant structure to fill the gate-trench. A gate(110a) is formed by planarizing the conductive layer. A source/drain region(116) is then formed in the substrate.
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