METHOD FOR FORMING COPPER LAYER FOR SEMICONDUCTOR WIRING

摘要

PURPOSE: A method for forming a copper layer for a semiconductor wiring is provided to be capable of improving the attachment between an anti-diffusing layer and a copper seed layer, and reducing surface resistance by carrying out a high temperature heat treatment. CONSTITUTION: An anti-diffusing layer(120) made of nitride titanium and titanium, is formed on a silicone wafer(110). A copper seed layer(130) is formed on the upper surface of the anti-diffusing layer(120) by a wet or dry etching process. An electrolytically plated copper layer(140) is formed by using the copper seed layer(130) as an electrode. A high temperature heat treatment is then carried out to the resultant structure in the condition of one gas selected from a group consisting of nitride gas, hydrogen gas, or Ar gas, at the temperature of 50-700 °C for 30 seconds to 10 hours.