发明名称 CLEANING SOLUTION COMPOSITION FOR PHOTORESIST
摘要 PURPOSE: Provided are a cleaning solution composition which is used for preventing the breakage of photoresist pattern, a method for forming a photoresist pattern by using the same, and a semiconductor device obtained by the method. CONSTITUTION: The composition comprises a compound of formula 1, an alcohol compound, and water. In the formula 1, each of R and R1 is hydrogen, C1-C10 alkyl, aryl, azine, aminoalkyl, aminoaryl, carboxylic acid group, or sulfonic acid group, R' is amino group, hydroxyl group, C1-C10 alkyl, aryl, azine, aminoalkyl, aminoaryl, carboxylic acid group, or sulfonic group, A is C1-C5 alkylene or C3-C10 aromatic ring, and n is an integer of 0-2. The ratio of the compound of formula 1: alcohol compound: water is 0.001-5:0.01-10:85-99.989(wt%).
申请公布号 KR20030050174(A) 申请公布日期 2003.06.25
申请号 KR20010080573 申请日期 2001.12.18
申请人 HYNIX SEMICONDUCTOR INC. 发明人 HWANG, YEONG SEON;JUNG, JAE CHANG;LEE, GEUN SU;SHIN, GI SU
分类号 G03F7/32 主分类号 G03F7/32
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