| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of restraining the leakage current generated at a junction region by thinly forming a silicide layer on a gate electrode and a source/drain region using the second spacer. CONSTITUTION: A plurality of isolation layers(102) are formed at a semiconductor substrate(100). The first and second gate electrode(110,112) are formed on the semiconductor substrate. The first spacer(116) is formed at both sidewalls of the first and second gate electrode. Then, a source/drain region are formed at both sides of the first and second gate electrode in the semiconductor substrate. The second spacer(122) is formed at an exposed portion of the semiconductor substrate, wherein the exposed portion is formed by excessively etching the isolation layer while forming the first spacer. Then, a silicide layer(124) is formed on the gate electrode and the source/drain region.
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