METHOD FOR FABRICATING RUTHENIUM THIN FILM USING PLASMA ENHANCED PROCESS

摘要

PURPOSE: A method for fabricating a ruthenium thin film using a plasma enhanced process is provided to improve surface morphology and step coverage, by depositing a Ru thin film through a thermal chemical vapor deposition(CVD) method after a Ru seed layer is formed through a plasma enhanced CVD(PECVD) method, by forming the Ru thin film through a PECVD method after the Ru thin film is deposited through a thermal CVD method or by performing an oxygen plasma process on the surface of the Ru thin film after the Ru thin film is deposited through a thermal CVD method. CONSTITUTION: The Ru seed layer is formed on a substrate through a PECVD method. The Ru layer is formed on the Ru seed layer through a thermal CVD method. The Ru seed layer is 100-150 angstrom in thickness. Ru(OD)3 is used as a Ru source in the abovementioned process.