| 摘要 |
PURPOSE: A method for fabricating a metal interconnection of a semiconductor device is provided to prevent the moisture contained in a low dielectric insulation layer from being outgassed and prevent a sidewall profile from being changed by forming a capping layer and performing a plasma treatment process on the capping layer. CONSTITUTION: A lower metal interconnection(2) is formed on a semiconductor substrate(1). The first interlayer dielectric(3) is so formed to expose the upper surface of the lower metal interconnection. The second interlayer dielectric composed of a low dielectric insulation layer is formed on the first interlayer dielectric and the lower metal interconnection. The second interlayer dielectric is etched to form a via hole exposing the lower metal interconnection and to form a trench defining an upper metal interconnection formation region. The capping layer(11) is deposited on the side surface of the via hole and trench, the exposed lower metal interconnection and the second interlayer dielectric. A plasma treatment process is performed on the capping layer. A radio frequency(RF) etch process is performed on the resultant structure to remove the capping layer deposited on the second interlayer dielectric, the bottom surface of the trench and the lower metal interconnection. A barrier layer(12) and a metal layer for interconnection are sequentially deposited to fill the via hole and the trench. The metal layer for interconnection and the barrier layer are polished until the second interlayer dielectric is exposed.
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