PLANARIZATION METHOD OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A planarization method of a semiconductor device is provided to be capable of easily removing slurry residuals by carrying out a buffing process using ammonia after a CMP(Chemical Mechanical Polishing) process. CONSTITUTION: After forming an interlayer dielectric(12) on a semiconductor substrate(10), the interlayer dielectric is selectively etched by using a photoresist pattern as a mask for exposing the predetermined portion of the semiconductor substrate. After depositing a tungsten layer(14) on the resultant structure, a planarization process is carried out for forming a tungsten plug(16). A buffing process is carried out by using ammonia for removing particles(20) remaining on the tungsten plug. Then, a cleaning process is carried out at the resultant structure.