| 摘要 |
PURPOSE: A method for manufacturing a transistor of a semiconductor device is provided to be capable of preventing the channeling phenomenon of a gate by using a buffer oxide layer remaining on the upper portion of the gate as a screen layer while carrying out a high concentration ion implantation. CONSTITUTION: After forming a gate oxide layer(23) and a gate(25) carrying out predetermined processes, a source/drain region(26) are formed by an ion implantation process. At this time, a buffer oxide layer(27) is used for preventing the channeling phenomenon of the gate. Preferably, a low concentration ion implantation process is carried out for forming an LDD(Lightly Doped Drain) structure after forming the gate. Preferably, the buffer oxide layer has a thickness of 100-200 angstrom.
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