| 摘要 |
PURPOSE: A method for forming a gate electrode of a semiconductor device is provided to be capable of improving the dielectric characteristic of a gate oxide layer by carrying out a heat treatment after depositing a polysilicon layer. CONSTITUTION: After forming a trench(12) in a semiconductor substrate(11), a gate oxide layer(13) and a polysilicon layer(14) are sequentially formed on the entire surface of the resultant structure. Then, a heat treatment is carried out for removing the stress of the polysilicon layer. Preferably, an RTP(Rapid Thermal Process) or a thermal annealing process using a furnace, is used as the heat treatment. Preferably, the thermal annealing process using a furnace is carried out by using N2 gas at the temperature of 675-800 °C for 10-60 seconds. Preferably, the RTP is carried out by using N2 gas at the temperature of 800-1100 °C for 10-60 seconds.
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