| 摘要 |
In an exposure apparatus (100), a main controller (50) calculates the thickness of a light transmitting protective member that protects a pattern surface of a mask (R), based on detection signals of a first and second reflection beams of a detection beam irradiated from an irradiation system (20a), reflected off the front and back surfaces of the protective member, and received by a photodetection system (20b). This makes exposure that takes into account the variation in the image forming state of the image pattern depending on the calculated thickness of the protective member possible. Accordingly, exposure with high precision is possible, without the difference in thickness of the protective member protecting the pattern surface of the mask affecting the exposure. In addition, when the incident angle of the detection beam is optimized, setting a detection offset in the photodetection system, or resetting the origin will not be necessary. <IMAGE>
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