| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to prevent ion penetration in an ion implantation process and reduce sheet resistance caused by an increased doping density in a shallow impurity region in forming a source/drain region by forming a silicon growth layer on a semiconductor substrate and by forming an impurity region through a low density ion implantation process. CONSTITUTION: An isolation layer(102) for defining an active region and an inactive region of the semiconductor substrate(100) is formed. A growth layer is formed on the active region. An ion implantation process and an annealing process are sequentially performed on the growth layer to form an ion implantation layer. A gate electrode is formed on the ion implantation layer. A source region and a drain region are formed on the semiconductor substrate. After a metal layer is formed on the resultant structure, a heat treatment process is performed to form a silicide layer.
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