METHOD AND APPARATUS FOR SEMICONDUCTOR WIRING FORMATION, METHOD AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND WAFER

摘要

PURPOSE: To provide a method and apparatus for semiconductor wiring formation, a method and apparatus for semiconductor device manufacturing, and a wafer which can omit a thermosetting process and a surface smoothing process, reduce the thickness of a barrier layer, and form wires in a groove with a high aspect ratio under optimum conditions. CONSTITUTION: A vacuum chamber 2 whose inside can be held in a substantially vacuum state is used and the wafer 201 where a semiconductor wiring film is formed is held by a base material holder 3 arranged in the vacuum chamber 2; and the material of the semiconductor wiring film is vaporized by a vapor source 4 arranged in the vacuum chamber 2 and a high-frequency power source 10 supplies high-frequency electric power for generating a plasma 301 in the vacuum chamber 2 by using the base material holder 3 as one electrode.