SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND ITS FABRICATING METHOD

摘要

PURPOSE: To provide a high performance, deep submicron double gate type SOIMOS, and its fabricating method, in which impurities are redistributed heavily on a buried gate insulation film interface, double gates are self-aligned and, at the same time, buried gate electrodes are electrically isolated completely from each other. CONSTITUTION: A multilayer SOI substrate having an amorphous or polycrystal semiconductor layer formed beneath an SOI layer through a gate insulation film is employed, the semiconductor layer is implanted with ions in a pattern reverse to that of an upper gate electrode, and a buried gate is formed in self- alignment with the upper gate.