发明名称 |
METHOD FOR MAKING CRYSTAL DEFECT OBVIOUS, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE FOR EVALUATION, METHOD FOR EVALUATING CRYSTAL DEFECT, AND SEMICONDUCTOR DEVICE FOR EVALUATION |
摘要 |
PURPOSE: To obtain an evaluation method of crystal defects for evaluating the crystal defects that are generated in a thin-film SOI layer and a thin-film surface layer through inline inspection. CONSTITUTION: In the evaluation region of an SOI layer 3, a silicide region 8 corresponding to a crystal defect generated in the SOI layer 3 is formed. In the silicide region 8, a metal element contained in a transition layer 10 is diffused into the SOI layer 3 through heat treatment, and is subjected to gettering by the crystal defects for silicide. Laser beams are irradiated inside the evaluation region through the transition layer 10 and a silicon oxide film 6. The evaluation region is scanned by laser beams, and at the same time, a current flowing between the first and second probes is detected by an ammeter, thus evaluating the crystal defects in the evaluation region.
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申请公布号 |
KR20030051180(A) |
申请公布日期 |
2003.06.25 |
申请号 |
KR20020054494 |
申请日期 |
2002.09.10 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
NARUOKA HIDEKI |
分类号 |
H01L21/66;H01L23/544;(IPC1-7):H01L21/66 |
主分类号 |
H01L21/66 |
代理机构 |
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地址 |
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