| 摘要 |
PURPOSE: A magnetic memory device having a magnetic shielding layer and a manufacturing method thereof are provided to be capable of preventing write-error caused by the leakage magnetic field between neighboring cells. CONSTITUTION: In the magnetic memory device according to the first embodiment, first and second wiring layers(13,20) run in different directions. Each MTJ element(18) electrically connected to corresponding first and second wiring layers(13,20) is arranged at the node between the first and second wiring layers(13,20) between the first and second wiring layers(13,20). A magnetic shield layer(21) is so formed as to cover the side surface of each MTJ element(18) and the upper and side surfaces of each second wiring layer(20). The magnetic shield layer(21) is continuously formed over adjacent second wiring layers(20). A width X of the MTJ element(18) in a direction in which the first wiring layer(13) runs is equal to the width of the second wiring layer(20). A width Y of the MTJ element(18) in a direction in which the second wiring layer(20) runs is equal to the width of the first wiring layer(13). Hence, the side surface of the MTJ element(18) in the direction in which the second wiring layer(20) runs and the side surface of the second wiring layer(20) in this direction form a plane almost free from any step. The magnetic shield layer(21) is so formed as to cover this plane. An interlayer dielectric film(19) fills the interval between MTJ elements(18). The film thicknesses of the interlayer dielectric film(19) and MTJ element(18) are almost equal to each other.
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