| 摘要 |
PURPOSE: A semiconductor device and a method for forming the same are provided to be capable of reducing contact resistance, and restraining electro-migration and stress migration by directly contacting between a via contact plug and a copper pattern of a lower metal wiring at a predetermined portion. CONSTITUTION: An interlayer dielectric(170) made of a lower and upper barrier layer(205,150), and the first insulating layer(160), is formed on a copper pattern(133) of a lower metal wiring(130). An upper metal wiring is spaced apart form the lower metal wiring by the interlayer dielectric. A via contact plug(195) is connected between the lower and upper metal wiring through the interlayer dielectric. At this time, the contact plug width of the lower barrier layer portion is wider than that of the upper barrier layer portion. A barrier metal layer(180) is formed for enclosing the sidewall and rear surface of the via contact plug. At this time, the barrier metal layer has a discontinuous portion, so that the via contact plug is directly connected to the copper pattern of the lower metal wiring through the discontinuous portion. |
