METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of minimizing losses of a gate electrode and a hard mask by using simple processes. CONSTITUTION: A spacer insulating layer(23) is formed according to the profile of a plurality of conductive patterns formed on a substrate(20). The first insulating layer(24) is formed on the resultant structure. At this time, voids(25) are formed between the conductive patterns. The second insulating layer(26) is formed on the first insulating layer. After forming a photoresist pattern on the second insulating layer, a contact hole(28) is formed to expose the substrate(20) between the conductive patterns by selectively etching the second and first insulating layer(26,24) using the photoresist pattern as a mask.