发明名称 CONNECTION STRUCTURE BETWEEN METAL WIRING AND VIA PLUG AND FORMING METHOD THEREOF
摘要 PURPOSE: A connection structure between a metal wiring and a via plug and a method for forming the same are provided to be capable of improving the reliability of electrical contact and easily obtaining multilayer metallization. CONSTITUTION: A lower via plug(35) is formed at a desired portion of an insulating layer(31). A metal wiring is formed on the insulating layer to connect the lower via plug(35). A metallic spacer(45) is formed at both sidewalls of the metal wiring. After forming an interlayer dielectric(46) on the resultant structure, an upper via plug(50) is formed to connect the metal wiring via the interlayer dielectric. By using the metallic spacer(45), the electrical contact reliability between the via plugs(35,50) and the metal wiring, is improved.
申请公布号 KR20030048889(A) 申请公布日期 2003.06.25
申请号 KR20010078936 申请日期 2001.12.13
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KIM, GIL HO
分类号 H01L21/28;(IPC1-7):H01L21/28 主分类号 H01L21/28
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