METHOD OF ETCHING COPPER/MOLYBDENUM LINE HAVING MOLYBDENUM LAYER AS BARRIER LAYER

摘要

PURPOSE: A method of etching a copper/molybdenum line having a molybdenum layer as a barrier layer is provided to form a Cu/Mo line with improved taper characteristic through a single etching process. CONSTITUTION: Mo and Cu(108b,108a) are sequentially deposited on a substrate(100). The Mo and Cu are simultaneously etched using a main etchant including an oxidizer and an etching agent and a sub-etchant for reducing potential difference between the Cu and Mo. The oxidizer is H2O2 and the etching agent is CH3COOH. The sub-etchant includes CH3CooNH4 and DI water.