发明名称 |
GAS MIXING BLOCK AND CHEMICAL VAPOR DEPOSITION(CVD) APPARATUS HAVING THE SAME |
摘要 |
PURPOSE: A gas mixing block and a CVD(Chemical Vapor Deposition) apparatus having the same are provided to be capable of minimizing the corrosion of the inner wall of a source path and the failure due to metal contaminants generated from a corrosion portion by using an oxide aluminum coated layer. CONSTITUTION: A mixing part(300) is installed for mixing sources in the state of vapor or gas. A plurality of lines(130a,130b,130c) are connected with the mixing part(300) through a plurality of connecting parts(310a,310b,310c) for independently supplying the sources. An exhaust part(320) is connected with the bottom portion of the mixing part(300) for exhausting the mixed source. An oxide aluminum coated layer(330) is formed on the inner wall of source paths.
|
申请公布号 |
KR20030048574(A) |
申请公布日期 |
2003.06.25 |
申请号 |
KR20010078514 |
申请日期 |
2001.12.12 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE, CHUN DEUK;SON, BYEONG U |
分类号 |
H01L21/205;(IPC1-7):H01L21/205 |
主分类号 |
H01L21/205 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|