| 发明名称 |
Plasma etching of silicon using fluorinated gas mixtures |
| 摘要 |
A method of etching silicon using a plasma generated from a gas comprising fluorine (F), oxygen (O), hydrogen (H) and carbon (C).
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| 申请公布号 |
US6583063(B1) |
申请公布日期 |
2003.06.24 |
| 申请号 |
US19990263634 |
申请日期 |
1999.03.05 |
| 申请人 |
APPLIED MATERIALS, INC. |
发明人 |
KHAN ANISUL;PODLESNIK DRAGAN;KIM NAM-HUN;LEE GENE |
| 分类号 |
H01L21/302;H01L21/3065;H01L21/3213;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/302 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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