Tungsten target for sputtering and method for preparing thereof

摘要

A tungsten powder having a powder specific surface of 0.4 m2/g or more is hot-pressed at a temperature of 1,600° C. or more and then subjected to HIP at a temperature of 1,700° C. or more without capsuling, whereby a tungsten target for sputtering is manufactured that has a relative density of 99% or more and an average crystal grain size of 100 mum or less. This manufacturing method can manufacture, stably at a low cost, a tungsten target having such a high density and fine crystal structure as cannot be attained by the conventional pressure sintering method, and can greatly decrease the number of particle defects on a film produced by using such a target.