Method of underfilling semiconductor device

摘要

Prior to setting of a semiconductor device upon the surface of a wiring substrate, the fluid of a light curable reaction resin is supplied from a nozzle to the surface of the wiring substrate. When the predetermined amount of the fluid has been discharged from the nozzle, the fluid within the nozzle is irradiated through a transparent window defined in the nozzle. A hardening reaction is induced in the irradiated segment of the fluid. The reduction in the fluidity can be achieved in the irradiated segment of the fluid. The irradiated segment forms a partition mass in the fluid within the nozzle. A reliable split can thus be achieved between the partition mass and the fluid discharged from the tip end of the nozzle. The split can be utilized to control the supplied amount of the fluid at a higher accuracy.