Method for filling high aspect ratio via holes in electronic substrates

摘要

High aspect ratio (5:1-30:1) and small (5 mum-125 mum) diameter holes in a dielectric substrate are provided, which are filled with a solidified conductive material, as well as a method of filling such holes using pressure and vacuum. In certain embodiments, the holes are lined with conductive material and/or capped with a conductive material. The invention also contemplates a chip carrier formed by such material.